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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1975 2SD1975A
DESCRIPTION *With TO-3PL package *Complement to type 2SB1317/1317A *Wide area of safe operation *High transition frequency fT APPLICATIONS *For high power amplification *Optimum for the output stage of a Hi-Fi audio amplifier
PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-3PL) and symbol Emitter DESCRIPTION
Absolute maximum ratings(Ta=25)
SYMBOL PARAMETER 2SD1975 VCBO Collector-base voltage 2SD1975A 2SD1975 VCEO Collector-emitter voltage 2SD1975A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 150 150 -55~150 Open collector Open base 200 5 15 25 3.5 W V A A Open emitter 200 180 V CONDITIONS VALUE 180 V UNIT
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL VCEsat VBE PARAMETER Collector-emitter saturation voltage Emitter-base voltage 2SD1975 ICBO Collector cut-off current 2SD1975A IEBO hFE-1 hFE-2 hFE-3 fT COB Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10A ;IB=1A IC=8A ; VCE=5V VCB=180V; IE=0
2SD1975 2SD1975A
MIN
TYP.
MAX 2.5 1.8
UNIT V V
50 VCB=200V; IE=0 VEB=3V; IC=0 IC=20mA ; VCE=5V IC=1A ; VCE=5V IC=8A ; VCE=5V IC=0.5A ; VCE=5V f=1MHz;VCB=10V 20 60 20 20 200 200 50
A
A
MHz pF
hFE-2 classifications Q 60-120 S 80-160 P 100-200
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1975 2SD1975A
Fig.2 Outline dimensions (unindicated tolerance:0.50 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1975 2SD1975A
4


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